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| CMPT2369 NPN SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications. Marking Code is C1J. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC PD TJ,Tstg JA 40 40 15 4.5 500 350 -65 to +150 357 UNITS V V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE Cob fT ts ton toff TEST CONDITIONS MIN VCB=20V VCB=20V, TA=125oC IC=10A 40 IC=10A 40 IC=10mA 15 IE=10A 4.5 IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA 0.7 VCE=1.0V, IC=10mA 40 VCE=2.0V, IC=100mA 20 VCB=5.0V, IE=0, f=1.0MHz VCE=10V, IC=10mA, f=100MHz 500 VCC=3.0V, IC=IB1=IB2=10mA VCC=3.0V, IC=10mA, IB1=3.0mA VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA MAX 0.4 30 UNITS A A V V V V V V 0.25 0.85 120 4.0 13 12 18 pF MHz ns ns ns 160 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 161 |
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